4H-SiC trench MOSFET with an integrated Schottky barrier diode and L-shaped P<sup>+</sup> shielding region-中国光学期刊网
PDF) On-resistance analysis in trench power MOSFETs with fully depletion between trenches | david flores - Academia.edu
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MITSUBISHI ELECTRIC News Releases Mitsubishi Electric Develops Trench-type SiC-MOSFET with Unique Electric-field-limiting Structure
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Fabrication of Superjunction Trench Gate Power MOSFETs Using BSG‐Doped Deep Trench of p‐Pillar - Kim - 2013 - ETRI Journal - Wiley Online Library
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a) Half of the trench power MOSFET basic cell. (b) Doping... | Download Scientific Diagram
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